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semiconductor group 25.01.1999 page 1 bts 452 t target data sheet smart power high-side-switch features overload protection current limitation short circuit protection thermal shutdown with restart overvoltage protection (including load dump) fast demagnetization of inductive loads reverse battery protection with external resistor cmos compatible input loss of gnd and loss of v bb protection esd - protection very low standby current product summary overvoltage protection v bb(az) v 60 operating voltage v bb(on) 5...34 v m w on-state resistance r on 200 nominal load current i l(iso) 1.8 a application all types of resistive, inductive and capacitive loads c compatible power switch for 12 v and 24 v dc applications replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input, monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions.
semiconductor group 25.01.1999 page 2 target data sheet bts 452 t block diagram + v bb in signal gnd esd miniprofet a out gnd logic voltage source charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit load gnd load v logic overvoltage protection pin symbol function 1 logic ground gnd in input, activates the power switch in case of logic high signal 2 3 vbb positive power supply voltage nc not connected 4 5 output to the load out vbb positive power supply voltage tab
semiconductor group 25.01.1999 page 3
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semiconductor group 25.01.1999 page 6 target data sheet bts 452 t parameter and conditions symbol unit values dw 7 m ?& 9 ee 9xqohvvrwkhuzlvhvshflilhg typ. max. min. input 2.2 v - input turn-on threshold voltage t j = -40 ... +150c - v in(t+) 0.8 - input turn-off threshold voltage t j = -40 ... +150c - v in(t-) - input threshold hysteresis - d v in(t) v 0.3 a i in(off) off state input current v in = 0.7 v, t j = -40...+150 c 1 25 - on state input current v in = 5 v, t j = -40...+150 c i in(on) 25 - 3 input resistance (see page 7) r i - k w 3.5 -
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semiconductor group 25.01.1999 page 8 target data sheet bts 452 t v bb disconnect with charged inductive load profet v in out gnd bb v bb high gnd disconnect profet v in out gnd bb v bb v in v gnd inductive load switch-off energy dissipation profet v in out gnd bb = e e e e as bb l r e load r l l ^ l z gnd disconnect with gnd pull up profet v in out gnd bb v bb v gnd v in energy stored in load inductance: e l = ? * l * i l 2 while demagnetizing load inductance, the enrgy dissipated in profet is e as = e bb + e l - e r = v on(cl) * i l (t) dt, with an approximate solution for r l > 0 w : e il r vv ir v as l l bb out cl ll out cl =+ + * * *( | )*ln( * || ) ()| () 2 1
semiconductor group 25.01.1999 page 9 target data sheet bts 452 t timing diagrams figure 2b: switching a lamp, figure 1a: vbb turn on: in out l t i in v out v bb t figure 2a: switching a resistive load, turn-on/off time and slew rate definition figure 2c: switching an inductive load in t v out i l t t on off 90% dv/dton d v /d to ff 10% in l t v i out
semiconductor group 25.01.1999 page 10 target data sheet bts 452 t figure 3a: turn on into short circuit, shut down by overtemperature, restart by cooling t i in l l(scr) i i l(scp) t off(sc) t m t +hdwlqjxsriwkhfklspd\uhtxluhvhyhudoploolvhfrqgvghshqglqj rqh[whuqdofrqglwlrqv figure 4 : overtemperature: reset if t j < t j t figure 5: undervoltage restart of charge pump v o n v b b ( u n d e r ) v b b ( u c p ) v b b in out j t v t
semiconductor group 25.01.1999 page 11 target data sheet bts 452 t package and ordering code all dimensions in mm ordering code: xxx gpt09161 5.4 0.1 -0.10 6.5 +0.15 a 0.5 9.9 6.22 -0.2 1 0.1 0.15 0.8 0.15 max 0.1 per side 5x0.6 1.14 4.56 +0.08 -0.04 0.9 2.3 -0.10 +0.05 b 0.51 min 0.1 1 +0.08 -0.04 0.5 0...0.15 b a 0.25 m 0.1 all metal surfaces tin plated, except area of cut. (4.17) printed circuit board (fr4, 1.5mm thick, one layer 70m, 6cm 2 active heatsink area ) as a reference for max. power dissipation p tot nominal load current i l(nom) and thermal resistance r thja edition 01 / 1999 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, 81541 mnchen ? siemens ag 1997 all rights reserved. attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 of the semiconductor group of siemens ag, may only be used in life-support devices or systems 2 with the express written approval of the semiconductor group of siemens ag. 1)a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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